Product Summary

This CVD SiC particle is engineered as a high-purity raw material for the silicon carbide crystal growth process, specifically for PVT (Physical Vapor Transport) furnaces. With purity equal to or exceeding 99.9999% (6N+ grade) and total metal contamination below 1 ppm, this material meets the stringent requirements of advanced semiconductor manufacturing. The consistent grain size range of 1.0 to 5.0 mm ensures uniform sublimation behavior, contributing to stable crystal growth and high-quality SiC ingots.

Key Selling Points

• 6N+ purity (≥99.9999%) with total metals < 1 ppm, ensuring minimal contamination in the crystal growth process, leading to higher yield and better electronic properties.
• Controlled grain size (1.0-5.0 mm) promotes uniform sublimation and consistent growth conditions, reducing process variability.
• Low free carbon content (≤0.05 ppm) prevents carbon inclusions and defects in the grown crystal, improving crystal quality.
• High bulk density (close to 3.21 g/cm³) provides stable packing and thermal conductivity, enhancing process efficiency.
• Proven in high-temperature environments: backed by a European customer case, this material has been used for over 2 years at >2000°C with zero outgassing and stable mass production, reducing process downtime by 15%.

Technical Specifications

Models and Options

• Standard Grade: CVD-04 – grain size 1.0 - 5.0 mm, purity 6N+

For customized grain size or packaging options, please contact our sales team.

Materials and Structure

This product is made of high-purity CVD SiC (Chemical Vapor Deposition) material, which provides a dense and uniform crystalline structure. The CVD process ensures extremely low impurity levels and high thermal stability, making it ideal for demanding high-temperature crystal growth applications.

Applications

This CVD SiC particle is specifically designed for the silicon carbide crystal growth process in PVT furnaces. It is also suitable for other high-temperature induction sintering systems and as a coating material in various semiconductor manufacturing equipment.

Customization

We can customize grain size distribution, packaging, and other specifications based on your specific process requirements. Please contact us with your detailed needs.

Case Study

European Market Application in High-Quality SiC Crystal Growth

A European customer has been using our CVD SiC particles for over 2 years in continuous high-temperature process conditions (>2000°C) to obtain high-quality SiC crystals. The result was stable mass production with consistent SiC crystal growth quality, and process downtime was reduced by 15%. The ultra-high purity matrix coating exhibited excellent thermal shock resistance, zero outgassing, and long-term quality stability.

FAQ

1. What is the MOQ for this product?

The MOQ is 1 unit.

2. What are the available delivery methods?

We offer EXW, FCA, DAP, and DDP.

3. What is the payment terms?

For new customers, 100% T/T in advance; for long-term cooperation customers, 70% T/T in advance and 30% before shipment.

4. How is the product quality assured?

We have ISO9001, ISO14001, and ISO45001 quality management system certificates. Additionally, pre-shipment tests are performed for acceptance.

5. How does this product perform in high-temperature environments?

It has been validated in >2000°C operations with zero outgassing and excellent thermal shock resistance, ensuring stable performance in PVT crystal growth.

6. Can I get a sample for evaluation?

Please contact our sales team to discuss sampling possibilities.

7. What is the typical lead time?

Lead time may vary based on order quantity and specifications. Please contact us for current lead times.

Inquiry Information

For more information or to place an order, please contact us via:

• Email: sales05@semi-cera.com
• Tel/WhatsApp: +86 15957878134
• Address: Ningbo, China

Image Filename and Alt Suggestions

• Filename: high-purity-cvd-sic-particle-cvd-04-6n.png
• Alt text: High-Purity CVD SiC Blocks and Granules for Semiconductors