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URL slug: sic-wafer-boat-crystal-growth
Designed for SiC crystal growth processes, this wafer boat features an ultra-high purity matrix coating, zero outgassing, and excellent thermal shock resistance. It ensures long-term quality stability under extreme temperatures up to 2000°C.
| Parameter | Value |
|---|---|
| Material Substrate | SiSiC or RSiC |
| Coating | Ultra-high purity CVD SiC |
| Max Working Temp | Up to 2000°C (for crystal growth) |
| Outgassing | Zero |
| Thermal Shock | Excellent |
Model: SiC-01. Options: customized purity levels, dimensions, and slot configurations.
High purity SiC matrix with CVD coating. Structure designed to hold SiC crystals during growth.
SiC crystal growth processes, high-temperature semiconductor manufacturing.
Custom dimensions and coating options to meet specific growth furnace requirements.
In Europe, a customer used 10,000 units per year to get high-quality SiC crystal. Achieved consistent crystal growth quality and reduced process downtime by 15%.
A: It can operate at 2000°C for crystal growth applications.
A: No, zero outgassing ensures purity.
A: Yes, excellent thermal shock resistance.
A: SiSiC or RSiC.
A: High purity and zero outgassing prevent contamination, improving crystal quality.
A: 1 unit.
Contact: Frank, sales05@semi-cera.com, +86 15957878134. MOQ: 1 unit.
Image filename: sic-wafer-boat-crystal-growth.png. Alt text: SiC wafer boat for crystal growth.
